1998. 7. 8
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA110M~KRA114M
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
R1
C
E
B
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Collector Power Dissipation
P
C
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 7. 8
2/4
KRA110M~KRA114M
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1mA
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-0.5mA
-
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5mA
-
250
-
MHz
Input Resistor
KRA110M
R
1
-
4.7
-
k
KRA111M
-
10
-
KRA112M
-
100
-
KRA113M
-
22
-
KRA114M
-
47
-
Switching
Time
Rise
Time
KRA110M
t
r
V
O
=-5V
V
IN
=-5V
R
L
=1k
-
0.2
-
S
KRA111M
-
0.065
-
KRA112M
-
0.4
-
KRA113M
-
0.1
-
KRA114M
-
0.15
-
Storage
Time
KRA110M
t
stg
-
2.0
-
KRA111M
-
1.7
-
KRA112M
-
3.0
-
KRA113M
-
2.0
-
KRA114M
-
1.5
-
Fall
Time
KRA110M
t
f
-
0.3
-
KRA111M
-
0.3
-
KRA112M
-
1.7
-
KRA113M
-
0.8
-
KRA114M
-
1.5
-
1998. 7. 8
3/4
KRA110M~KRA114M
Revision No : 3
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-0.1
FE
300
-0.3
-1
-3
2k
h - I
FE
C
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
FE
h - I
FE
C
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
FE
h - I
FE
C
C
-10
-30
-100
10
30
50
100
500
1k
Ta=100 C
Ta=25 C
Ta=-25 C
V =-5V
CE
-0.3
-0.1
100
30
50
10
300
500
1k
2k
V =-5V
-10
-3
-1
Ta=100 C
Ta=25 C
Ta=-25 C
CE
-100
-30
-0.3
10
-0.1
50
30
100
-10
V =-5V
Ta=-25 C
-1
CE
-3
-100
-30
1k
500
300
2k
Ta=25 C
Ta=100 C
KRA110M
KRA111M
KRA112M
KRA110M
-0.3
COLLECTOR CURRENT I (mA)
-0.1
COLLECTOR-EMITTER SATURATIN
CE(sat)
-0.1
-0.05
-0.03
-0.01
-1
-0.5
-0.3
-2
I /I =20
-10
-3
-1
Ta=-25 C
Ta=25 C
Ta=100 C
C
-100
-30
C
V - I
CE(sat)
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
CE(sat)
C
V - I
CE(sat)
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
CE(sat)
C
V - I
CE(sat)
C
VOLTAGE V (V)
I /I =20
Ta=-25 C
Ta=100 C
-0.3
-0.1
-0.3
-0.5
-0.01
-0.03
-0.05
-0.1
-1
C
-1
-3
-10
Ta=25 C
KRA111M
-2
-30
-100
B
B
Ta=100 C
-0.3
Ta=-25 C
-0.1
-0.05
-0.03
-0.01
-0.1
-1
Ta=25 C
-3
-10
-100
-30
I /I =20
KRA112M
-0.5
-0.3
-1
-2
B
C
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